bf 517 oct-26-1999 1 npn silicon rf transistor for amplifier and oscillator applications in tv-tuners 1 2 3 vps05161 type marking pin configuration package bf 517 lrs 1 = b 2 = e 3 = c sot-23 maximum ratings parameter symbol unit value collector-emitter voltage 15 v ceo v collector-base voltage v cbo 20 emitter-base voltage 2.5 v ebo 25 i c collector current ma peak collector current , f 10 mhz i cm 50 total power dissipation , t s 55 c f) p tot 280 mw junction temperature t j 150 c ambient temperature t a -65 ... 150 storage temperature t stg -65 ... 150 thermal resistance junction - soldering point r thjs 340 k/w 1 t s is measured on the collector lead at the soldering point to the pcb
bf 517 oct-26-1999 2 electrical characteristics at t a = 25 c, unless otherwise specified. parameter values symbol unit max. typ. min. dc characteristics v (br)ceo 15 - collector-emitter breakdown voltage i c = 1 ma, i b = 0 - v collector-base cutoff current v cb = 15 v, i e = 0 i cbo - - na 50 - dc current gain i c = 5 ma, v ce = 10 v - 25 h fe 250 v collector-emitter saturation voltage i c = 10 ma, i b = 1 ma v cesat - 0.1 0.5 ac characteristics - ghz transition frequency i c = 5 ma, v ce = 10 v, f = 200 mhz 2 1 f t collector-base capacitance v cb = 5 v, f = 1 mhz 0.75 0.3 pf c cb 0.55 0.4 c ce 0.25 - collector-emitter capacitance v ce = 5 v, f = 1 mhz - input capacitance v eb = 0.5 v, i c = 0 , f = 1 mhz c ibo 1.45 - - c obs - output capacitance v ce = 5 v, v be = 0 , f = 1 mhz 0.8 - f 2.5 - noise figure i c = 5 ma, v ce = 10 v, f = 100 mhz, z s = 75 db
bf 517 oct-26-1999 3 total power dissipation p tot = f ( t a *, t s ) * package mounted on epoxy 0 20 40 60 80 100 120 c 150 t a ,t s 0 50 100 150 200 mw 300 p tot t s t a permissible pulse load r thjs = f ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -1 10 0 10 1 10 2 10 3 10 k/w r thjs 0.5 0.2 0.1 0.05 0.02 0.01 0.005 d = 0 permissible pulse load p totmax / p totdc = f ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 3 10 - p totmax / p totdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
bf 517 oct-26-1999 4 collector-base capacitance c cb = f ( v cb ) f = 1mhz 0 4 8 12 16 20 v 26 v cb 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 pf 1.3 c cb transition frequency f t = f ( i c ) v ce = parameter 0 5 10 15 20 ma 30 i c 0.0 0.5 1.0 1.5 2.0 ghz 3.0 f t 10v 5v 3v 2v 1v 0.7v
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